2N6520 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for applications requiring high breakdown voltage. pinning 1 = emitter 2 = base 3 = collector to-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) typ .190(4.83) .170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. dimensions in inches and (millimeters) characteristic symbol rating unit collector-base voltage vcbo -350 v collector-emitter voltage vceo -350 v emitter-base voltage vebo -5 v collector current ic -500 ma total power dissipation pd 625 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -350 - - v ic=-100ma, ie=0 collector-emitter breakdown voltage bvceo -350 - - v ic=-1ma, ib=0 emitter-base breakdown volatge bvebo -5 - - v ie=-10ma, ic=0 collector cutoff current icbo - - -50 na vcb =-250v, ie=0 emittercuto f f current iebo - - -50 na veb=- 4v , ic=0 vce(sat)1 - - -0.30 v ic=-10ma, ib=-1ma collector-emitter saturation voltage (1) vce(sat)2 - - -0.35 v ic=-20ma, ib=-2ma vce(sat)3 - - -0.50 v ic=-30ma, ib=-3ma base-emitter saturation voltage (1) vbe(sat)1 - - -0.75 v ic=-10ma, ib=-1ma vbe(sat)2 - - -0.85 v ic=-20ma, ib=-2ma vbe(sat)3 - - -0.90 v ic=-30ma, ib=-3ma base-emitter on voltage (1) vbe(on) - - -2 v ic=-100ma, vce=-10v hfe1 20 - - - ic=-1ma, vce=-10v dc current gain(1) hfe2 30 - - - ic=-10ma, vce=-10v hfe3 30 - 200 - ic=-30ma, vce=-10v hfe4 20 - 200 - ic=-50ma, vce=-10v transition frequency ft 40 - 200 mhz ic=-10ma, vce =-20v, f=20mhz output capacitance cob - - 6 pf vcb =-20v, f=1mhz, ie=0 electrical characteristics (ratings at 25oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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